publication order number: mmbf2202pt1/d ? semiconductor components industries, llc, 2000 november, 2000 rev. 3 1 mmbf2202pt1 preferred device power mosfet 300 mamps, 20 volts pchannel sc70/sot323 these miniature surface mount mosfets low r ds(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ? low r ds(on) provides higher efficiency and extends battery life ? miniature sc70/sot323 surface mount package saves board space maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 20 vdc gatetosource voltage continuous v gs 20 vdc drain current continuous @ t a = 25 c continuous @ t a = 70 c pulsed drain current (t p 10 m s) i d i d i dm 300 240 750 madc total power dissipation @ t a = 25 c (note 1.) derate above 25 c p d 150 1.2 mw mw/ c operating and storage temperature range t j , t stg 55 to 150 c thermal resistance junctiontoambient r q ja 833 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c 1. mounted on g10/fr4 glass epoxy board using minimum recommended footprint. 3 1 2 pchannel 1 3 top view source gate drain 2 1 300 mamps 20 volts r ds(on) = 2.2 device package shipping ordering information mmbf2202pt1 sc70/ sot323 3000 tape & reel sc70/sot323 case 419 style 8 http://onsemi.com w marking diagram p3 w = work week pin assignment preferred devices are recommended choices for future use and best overall value. 3 2
mmbf2202pt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 10 m a) v (br)dss 20 vdc zero gate voltage drain current (v ds = 16 vdc, v gs = 0 vdc) (v ds = 16 vdc, v gs = 0 vdc, t j = 125 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0) i gss 100 nadc on characteristics (note 2.) gate threshold voltage (v ds = v gs , i d = 250 m adc) v gs(th) 1.0 1.7 2.4 vdc static draintosource onresistance (v gs = 10 vdc, i d = 200 madc) (v gs = 4.5 vdc, i d = 50 madc) r ds(on) 1.5 2.0 2.2 3.5 ohms forward transconductance (v ds = 10 vdc, i d = 200 madc) g fs 600 mmhos dynamic characteristics input capacitance (v ds = 5.0 v) c iss 50 pf output capacitance (v ds = 5.0 v) c oss 45 transfer capacitance (v dg = 5.0 v) c rss 20 switching characteristics (note 3.) turnon delay time t d(on) 2.5 ns rise time (v dd = 15 vdc, r l =75 w i d = 200 madc t r 1.0 turnoff delay time r l = 75 w , i d = 200 madc, v gen = 10 v, r g = 6.0 w ) t d(off) 16 fall time v gen 10 v, r g 6.0 w ) t f 8.0 gate charge (see figure 5) (v ds = 16 v, v gs = 10 v, i d = 200 ma) q t 2700 pc sourcedrain diode characteristics continuous current i s 0.3 a pulsed current i sm 0.75 forward voltage (note 3.) v sd 1.5 v 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature. typical characteristics figure 1. on resistance versus gatesource voltage 10 0 v gs , gate-source voltage (volts) i d = 200 ma 8 6 4 2 0 1 234 56 78 910 r ds(on) , on resistance (ohms) figure 2. on resistance versus temperature 4.0 -40 temperature ( c) v gs = 10 v i d = 200 ma 3.5 3.0 2.5 2.0 0 -20 0 20 40 60 80 100 120 140 160 r ds(on) , on resistance (ohms) 1.5 1.0 0.5 v gs = 4.5 v i d = 50 ma
mmbf2202pt1 http://onsemi.com 3 typical characteristics figure 3. on resistance versus drain current 6 0 i d , drain current (amps) v gs = 10 v 5 4 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 r ds(on) , on resistance (ohms) 1 v gs = 4.5 v figure 4. transfer characteristics 1.0 0 v gs , gate-source voltage (volts) 0.9 0.8 0.7 0.6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d , drain current (amps) 0.5 0.4 0.3 25 figure 5. sourcedrain forward voltage 1 v sd , source-drain forward voltage (volts) 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 i s , source current (amps) figure 6. on region characteristics 0.8 0 v ds , drain-source voltage (volts) v gs = 5 v 0.7 0.6 0.5 0.4 0 1 2345678910 i d(on) , drain current (amps) 0.3 0.2 0.1 v gs = 4.5 v figure 7. capacitance variation 50 0 v ds , drain-source voltage (volts) 45 40 35 30 0 2 4 6 8 10 12 14 16 18 20 c, capacitance (pf) 25 20 15 0.2 0.1 5.5 6.0 -55 150 25 150 v gs = 3.5 v v gs = 4 v v gs = 3 v 10 5 c iss c oss c rss v gs = 0 v f = 1 mhz
mmbf2202pt1 http://onsemi.com 4 information for using the sc70/sot323 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. mm inches 0.035 0.9 0.075 0.7 1.9 0.028 0.65 0.025 0.65 0.025 sc70/sot323 power dissipation the power dissipation of the sc70/sot323 is a function of the drain pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sc70/sot323 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 150 milliwatts. p d = 150 c 25 c 833 c/w = 150 milliwatts the 833 c/w for the sc70/sot323 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. there are other alternatives to achieving higher power dissipation from the sc70/sot323 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference should be a maximum of 10 c. ? the soldering temperature and time should not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient should be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
mmbf2202pt1 http://onsemi.com 5 package dimensions c n a l d g s b h j k 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 0.05 (0.002) style 8: pin 1. gate 2. source 3. drain sc70/sot323 case 41904 issue l
mmbf2202pt1 http://onsemi.com 6 notes
mmbf2202pt1 http://onsemi.com 7 notes
mmbf2202pt1 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmbf2202pt1/d thermal clad is a registered trademark of the bergquist company. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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